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IS61WV5128EDBLL-10BLI Electronic IC Chips IC Sram 4MBIT PARALLEL 36TFBGA

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IS61WV5128EDBLL-10BLI Electronic IC Chips IC Sram 4MBIT PARALLEL 36TFBGA

Brand Name : original

Model Number : IS61WV5128EDBLL-10BLI

Certification : original

Place of Origin : original

MOQ : 1

Price : negotiation

Payment Terms : T/T, L/C

Supply Ability : 100,000

Delivery Time : 1-3working days

Packaging Details : carton box

Write Cycle Time - Word, Page : 10ns

Access Time : 10 ns

Voltage - Supply : 2.4V ~ 3.6V

Operating Temperature : -40°C ~ 85°C (TA)

Mounting Type : Surface Mount

Package / Case : 36-TFBGA

Supplier Device Package : 36-TFBGA (6x8)

Base Product Number : IS61WV5128

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IS61WV5128EDBLL-10BLI Wireless Rf Module Ic Sram 4mbit Parallel 36tfbga

IS61WV5128EDBLL-10BLI Wireless Rf Module Ic Sram 4mbit Parallel 36tfbga

SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 36-TFBGA (6x8)

Specifications of IS61WV5128EDBLL-10BLI

TYPE DESCRIPTION
Category Integrated Circuits (ICs)
Memory
Memory
Mfr ISSI, Integrated Silicon Solution Inc
Series -
Package Tray
Product Status Active
Digi-Key Programmable Not Verified
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 4Mbit
Memory Organization 512K x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 10ns
Access Time 10 ns
Voltage - Supply 2.4V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 36-TFBGA
Supplier Device Package 36-TFBGA (6x8)
Base Product Number IS61WV5128

Features of IS61WV5128EDBLL-10BLI

• High-speed access time: 8, 10 ns
• Low Active Power: 85 mW (typical)
• Low Standby Power: 7 mW (typical) CMOS standby
• Single power supply
— Vdd 2.4V to 3.6V (10 ns)
— Vdd 3.3V ± 10% (8 ns)
• Fully static operation: no clock or refresh required
• Three state outputs
• Industrial and Automotive temperature support
• Lead-free available
• Error Detection and Error Correction

Applications of IS61WV5128EDBLL-10BLI

The ISSI IS61/64WV5128EDBLL is a high-speed, 4,194,304-bit static RAMs organized as 524,288 words by 8 bits.It is fabricated using ISSI's high-performanceCMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance
and low power consumption devices.
When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation canbe reduced down with CMOS input levels. Easy memory expansion is provided by using ChipEnable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS61/64WV5128EDBLL is packaged in the JEDEC standard 44-pinTSOP-II, 36-pin SOJ and 36-pin Mini BGA (6mm x 8mm).

Environmental & Export Classifications of IS61WV5128EDBLL-10BLI

ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041

IS61WV5128EDBLL-10BLI Electronic IC Chips IC Sram 4MBIT PARALLEL 36TFBGA


Product Tags:

IS61WV5128EDBLL-10BLI

      

IC Sram 4MBIT PARALLEL 36TFBGA

      

IS61WV5128EDBLL-10BLI IC Sram

      
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