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FM25H20-DG Temperature Sensor Chip Ic Fram 2mbit Spi 40mhz 8dfn

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FM25H20-DG Temperature Sensor Chip Ic Fram 2mbit Spi 40mhz 8dfn

Brand Name : original

Model Number : FM25H20-DG

Certification : original

Place of Origin : original

MOQ : 1

Price : negotiation

Payment Terms : T/T, L/C

Supply Ability : 100,000

Delivery Time : 1-3working days

Packaging Details : carton box

Package : Tube

Product Status : Obsolete

Memory Type : Non-Volatile

Memory Format : FRAM

Technology : FRAM (Ferroelectric RAM)

Memory Size : 2Mbit

Memory Organization : 256K x 8

Memory Interface : SPI

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FM25H20-DG Temperature Sensor Chip Ic Fram 2mbit Spi 40mhz 8dfn

FRAM (Ferroelectric RAM) Memory IC 2Mbit SPI 40 MHz 8-DFN (5x6)

Specifications of FM25H20-DG

TYPE DESCRIPTION
Category Integrated Circuits (ICs)
Memory
Memory
Mfr Infineon Technologies
Series F-RAM™
Package Tube
Product Status Obsolete
Memory Type Non-Volatile
Memory Format FRAM
Technology FRAM (Ferroelectric RAM)
Memory Size 2Mbit
Memory Organization 256K x 8
Memory Interface SPI
Clock Frequency 40 MHz
Write Cycle Time - Word, Page -
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad
Supplier Device Package 8-DFN (5x6)
Base Product Number FM25H20

Features of FM25H20-DG

■ 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 8
- High-endurance 100 trillion (1014) read/writes
- 151-year data retention (See the Data Retention and Endurance table)
- NoDelay™ writes
- Advanced high-reliability ferroelectric process
■ Very fast serial peripheral interface (SPI)
- Up to 40-MHz frequency
- Direct hardware replacement for serial flash andEEPROM
- Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
■ Sophisticated write protection scheme
- Hardware protection using the Write Protect (WP)pin
- Software protection using Write Disable instruction
- Software block protection for 1/4, 1/2, or entire array
■ Low power consumption
- 1 mA active current at 1 MHz
- 80 nA (typ) standby current
- 3 nA sleep mode current
■ Low-voltage operation: VDD = 2.7 V to 3.6 V
■ Industrial temperature –40 C to +85 C
■ Packages
- 8-pin small outline integrated circuit (SOIC) package
- 8-pin thin dual flat no leads (TDFN) package
■ Restriction of hazardous substances (RoHS) compliant

Applications of FM25H20-DG

The FM25H20 is a 2-Mbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.

Environmental & Export Classifications of FM25H20-DG

ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.32.0071

FM25H20-DG Temperature Sensor Chip Ic Fram 2mbit Spi 40mhz 8dfn




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