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HAT1072H-EL-E P-Channel MOSFET 30 V 40A (Ta) 30W (Tc) Surface Mount LFPAK

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SZ ADE Electronics Co., Ltd

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Name: HAT1072HELE PChannel MOSFET 30 V 40A Ta 30W Tc Surface Mount LFPAK
Brand: original
Price: 1 USD

Brand Name : original

Model Number : HAT1072H-EL-E

Certification : original

Place of Origin : original

MOQ : 1

Price : negotiation

Payment Terms : T/T

Supply Ability : 1000

Delivery Time : 3-5ddays

Packaging Details : carton box

FET Type : Drum Core, Wirewound

Material - Core : Ferrite

Inductance : 6.8 µH

Tolerance : ±20%

Current Rating (Amps) : 0.083333333

Shielding : Unshielded

DC Resistance (DCR) : 103.6mOhm Max

Frequency - Self Resonant : 25MHz

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HAT1072H-EL-E P-Channel 30 V 40A (Ta) 30W (Tc) Surface Mount LFPAK

Specifications of HAT1072H-EL-E

TYPE	DESCRIPTION
Category	Discrete Semiconductor Products
	Transistors
	FETs, MOSFETs
	Single FETs, MOSFETs
Mfr	Renesas Electronics America Inc
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	155 nC @ 10 V
Vgs (Max)	+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds	9500 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	30W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LFPAK
Package / Case	SC-100, SOT-669
Base Product Number	HAT1072

Features of HAT1072H-EL-E

• Capable of –4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance RDS (on) = 3.6 mΩ typ (at VGS = –10 V)

Environmental & Export Classifications of HAT1072H-EL-E

ATTRIBUTE	DESCRIPTION
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095

HAT1072H-EL-E P-Channel MOSFET 30 V 40A (Ta) 30W (Tc) Surface Mount LFPAK

Product Tags:

HAT1072H-EL-E

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